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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
STP75NF75
FEATURES *Drain Current -ID= 80A@ TC=25 *Drain Source Voltage: VDSS= 75V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.011(Max) DESCRIPTION Suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirements . APPLICATIONS *Solenoid and relay drivers *DC motor control *DC-DC converters DC *Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp10s) Total Dissipation @TC=25 Max. Operating Junction Temperature Storage Temperature VALUE 75 20 80 320 300 175 -55~175 UNIT V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.5 62.5 UNIT /W /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
STP75NF75
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
75
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 40A
0.011
IGSS
Gate-Body Leakage Current
VGS= 20V;VDS= 0 VDS= 75V; VGS= 0 VDS= 75V; VGS= 0; Tj= 125 IS= 80A; VGS=0
100 1 10 1.5
nA
IDSS
Zero Gate Voltage Drain Current
A
VSD
Forward On-Voltage
V
*
isc Websitewww.iscsemi.cn


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